PBSS9110T Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 May 06 2004 May 13 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor Features - SOT23 package - Low collector-emitter saturation voltage VCEsat - High collector current capability: IC and ICM - Higher efficiency leading to less heat generation APPLICATIONS - Major application segments - Automotive 42 V power - Tele infrastructure - Industrial - DC-to-DC conversion - Peripheral drivers - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN plement: PBSS8110T. MARKING TYPE NUMBER PBSS9110T Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. ORDERING INFORMATION TYPE NUMBER PBSS9110T PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) - U7 Top view handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. - 100 - 1 - 3 320 UNIT V A A mΩ 3 3 1 2 1...