* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High eff.

* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* Hig.

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110D. 1.2 Features
* Low collector-emitter saturation voltage VCEsat
* High collector .

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