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PBSS9110D Datasheet

PNP transistor

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PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 22 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110D.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ High-voltage DC-to-DC conversion
„ High-voltage MOSFET gate driving
„ High-voltage motor control
„ High-voltage power switches (e.g. motors, fans)
„ Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 1 A;
IB = 100 mA
Min Typ Max
Unit
- - 100 V
- - 1 A
- - 3 A
[1] -
170 320
mΩ


NXP Semiconductors Electronic Components Datasheet

PBSS9110D Datasheet

PNP transistor

No Preview Available !

NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1, 2, 5, 6
3
4
Pinning
Description
collector
base
emitter
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym030
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS9110D
SC-74
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
4. Marking
Table 4. Marking codes
Type number
PBSS9110D
Marking code
A7
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1] -
[2] -
[3] -
Max
120
100
5
1
3
Unit
V
V
V
A
A
0.3 A
300 mW
550 mW
700 mW
PBSS9110D_3
Product data sheet
Rev. 03 — 22 November 2009
© NXP B.V. 2009. All rights reserved.
2 of 13


Part Number PBSS9110D
Description PNP transistor
Maker NXP
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PBSS9110D Datasheet PDF






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