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NXP Semiconductors Electronic Components Datasheet

PBSS9110AS Datasheet

1A PNP low VCEsat (BISS) transistor

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PBSS9110AS
www.DataSheet4U.com
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 01 — 10 June 2004
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat (BISS) transistor in a SOT54 (SC-43/TO-92) plastic package.
1.2 Features
s SOT54 package
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency leading to less heat generation.
1.3 Applications
s Major application segments:
x Automotive 42 V power
x Telecom infrastructure
x Industrial.
s Peripheral driver:
x Driver in low supply voltage applications (e.g. lamps and LEDs)
x Inductive load driver (relays, buzzers and motors).
s DC-to-DC converter.
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
- - 100 V
- - 1 A
- - 3 A
- - 320 m


NXP Semiconductors Electronic Components Datasheet

PBSS9110AS Datasheet

1A PNP low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
PBSS9110AS
www.DataSheet4U.com
100 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pin
1
2
3
Discrete pinning
Description
collector
base
emitter
Simplified outline Symbol
1
2
1
3
2
3
sym025
3. Ordering information
Table 3: Ordering information
Type number
Package
Name
Description
PBSS9110AS
-
plastic single-ended leaded (through hole) package; 3 leads
4. Marking
Table 4: Marking
Type number
PBSS9110AS
[1] Made in Hong Kong.
Marking code
9110AS [1]
Version
SOT54
9397 750 12841
Product data sheet
Rev. 01 — 10 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 12


Part Number PBSS9110AS
Description 1A PNP low VCEsat (BISS) transistor
Maker NXP
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