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PBSS8510PA - 5.2A NPN Transistor

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General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

PNP complement: PBSS9410PA.

1.2

Overview

www.DataSheet4U.com PBSS8510PA 100 V, 5.2 A NPN low VCEsat (BISS) transistor Rev.

1 — 17 May 2010 Product data sheet 1.

Product profile 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3.

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