*
*
*
*
* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) ar.

*
*
*
*
* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. .

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS9410PA. 1.2 Features and benefits
.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts