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NXP Semiconductors Electronic Components Datasheet

PBSS8110Z Datasheet

1A NPN transistor

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PBSS8110Z
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 8 January 2007
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS9110Z.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 1 A;
IB = 100 mA
Min Typ Max
- - 100
--1
--3
[1] -
160 200
Unit
V
A
A
m


NXP Semiconductors Electronic Components Datasheet

PBSS8110Z Datasheet

1A NPN transistor

No Preview Available !

NXP Semiconductors
PBSS8110Z
100 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
base
collector
emitter
collector
Simplified outline Symbol
4 2, 4
123
1
3
sym016
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
Version
PBSS8110Z
SC-73 plastic surface-mounted package with increased heat sink; SOT223
4 leads
4. Marking
Table 4. Marking codes
Type number
PBSS8110Z
Marking code
PB8110
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1] -
[2] -
[3] -
Max Unit
120 V
100 V
5V
1A
3A
0.3 A
0.65 W
1W
1.4 W
PBSS8110Z_2
Product data sheet
Rev. 02 — 8 January 2007
© NXP B.V. 2007. All rights reserved.
2 of 14


Part Number PBSS8110Z
Description 1A NPN transistor
Maker NXP
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PBSS8110Z Datasheet PDF






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