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NXP Semiconductors Electronic Components Datasheet

PBSS8110Y Datasheet

NPN transistor

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PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 21 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat transistor in a SOT363 (SC-88) plastic package.
1.2 Features
„ SOT363 package
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High efficiency reduces heat generation
1.3 Applications
„ Major application segments:
‹ Automotive 42 V power
‹ Telecom infrastructure
‹ Industrial
„ Peripheral driver:
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load driver (e.g. relays, buzzers and motors)
„ DC-to-DC converter
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
- - 100 V
- - 1A
- - 3A
- - 200 mΩ


NXP Semiconductors Electronic Components Datasheet

PBSS8110Y Datasheet

NPN transistor

No Preview Available !

NXP Semiconductors
2. Pinning information
Table 2.
Pin
1, 2, 5, 6
3
4
Discrete pinning
Description
collector
base
emitter
PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym014
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PBSS8110Y -
plastic surface mounted package; 6 leads
4. Marking
Table 4. Marking
Type number
PPBSS8110Y
[1] * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
81*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
continuous collector current
continuous base current
total power dissipation
open emitter
open base
open collector
Tj(max)
Tamb 25 °C
-
-
-
-
-
-
[1] -
[2] -
[3] -
Max
120
100
5
3
1
0.3
290
480
625
Version
SOT363
Unit
V
V
V
A
A
A
mW
mW
mW
PBSS8110Y_2
Product data sheet
Rev. 02 — 21 November 2009
© NXP B.V. 2009. All rights reserved.
2 of 13


Part Number PBSS8110Y
Description NPN transistor
Maker NXP
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PBSS8110Y Datasheet PDF






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