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NXP Semiconductors Electronic Components Datasheet

PBSS8110D Datasheet

1A NPN transistor

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PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat transistor in a plastic SOT457 (SC-74) package.
1.2 Features
„ SOT457 package
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High efficiency, leading to less heat generation
1.3 Applications
„ Major application segments:
‹ Automotive 42 V power
‹ Telecom infrastructure
‹ Industrial
„ DC-to-DC converter
„ Peripheral driver
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load drivers (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
- - 100 V
- - 1A
- - 3A
- - 200 mΩ


NXP Semiconductors Electronic Components Datasheet

PBSS8110D Datasheet

1A NPN transistor

No Preview Available !

NXP Semiconductors
PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1, 2, 5, 6
3
4
Discrete pinning
Description
collector
base
emitter
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym014
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PBSS8110D -
plastic surface mounted package; 6 leads
4. Marking
Table 4. Marking
Type number
PBSS8110D
[1] Made in Malaysia
Marking code[1]
A8
Version
SOT457
PBSS8110D_2
Product data sheet
Rev. 02 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
2 of 12


Part Number PBSS8110D
Description 1A NPN transistor
Maker NXP
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PBSS8110D Datasheet PDF






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