PBSS5620PA Datasheet 6 A PNP Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com PBSS5620PA 20 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.

Datasheet Details

Part number	PBSS5620PA
Manufacturer	NXP Semiconductors
File Size	201.45 KB
Description	6 A PNP low VCEsat (BISS) transistor
Datasheet	PBSS5620PA_PhilipsSemiconductors.pdf

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4620PA.

1.2

Key Features

Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3.

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