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PBSS5612PA Datasheet PNP transistor

Manufacturer: NXP Semiconductors

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General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4612PA.

1.2

Overview

PBSS5612PA 12 V, 6 A PNP low VCEsat (BISS) transistor Rev.

01 — 7 May 2010 Product data sheet 1.

Product profile 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • Leadless small SMD plastic package with medium power capability 1.3.

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