PBSS5560PA Datasheet | NXP Semiconductors

description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN plement: PBSS4560PA. 1.2 Features and benefits - - - - - Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications - - - - - Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = - 5 A; IB = - 250 m A [1] Conditions open base Min - Typ 55 Max - 60 - 5 - 6 90 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. w w w . D a t a S h e e t 4 U . c NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitter collector 3 1 2 1 2 sym013 Simplified outline Graphic symbol Transparent top view 3. Ordering information Table 3. Ordering information Package Name PBSS5560PA Description Version HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061 no leads; three terminals; body 2 × 2 × 0.65 mm Type number 4. Marking Table 4. Marking codes Marking code AC Type number...