PBSS5440D
description
PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN plement: PBSS4440D
1.2 Features s s s s s Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation
1.3 Applications s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance t = 1 ms or limited by Tj(max) IC =
- 6 A; IB =
- 600 m A
[2]
Conditions open base
[1]
Min
- Typ 55
Max
- 40
- 4
- 15 75
Unit V A A mΩ
Device mounted on a ceramic Printed-Circuit Board...
