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PBSS5440D Datasheet

40 V PNP low VCEsat (BISS) transistor

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PBSS5440D
40 V PNP low VCEsat (BISS) transistor
Rev. 01 — 27 April 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a
SOT457 (SC-74) SMD plastic package.
NPN complement: PBSS4440D
1.2 Features
s Ultra low collector-emitter saturation voltage VCEsat
s 4 A continuous collector current capability IC (DC)
s Up to 15 A peak current
s Very low collector-emitter saturation resistance
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
Min
collector-emitter voltage open base
-
collector current (DC)
[1] -
peak collector current
collector-emitter saturation
resistance
t = 1 ms or limited by
Tj(max)
IC = 6 A;
IB = 600 mA
-
[2] -
Typ
-
-
-
55
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Max Unit
40 V
4 A
15 A
75 m


NXP Semiconductors Electronic Components Datasheet

PBSS5440D Datasheet

40 V PNP low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
PBSS5440D
www.DataSheet4U.com
40 V PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
collector
collector
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym030
3. Ordering information
Table 3: Ordering information
Type number
Package
Name
Description
PBSS5440D
SC-74
plastic surface mounted package; 6 leads
Version
SOT457
4. Marking
Table 4: Marking codes
Type number
PBSS5440D
Marking code
71
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
open emitter
open base
open collector
t = 1 ms or limited
by Tj(max)
tp 300 µs
Tamb 25 °C
-
-
-
[1] -
-
-
-
[2] -
[3] -
[4] -
[1] -
[2] [5] -
Max Unit
40 V
40 V
5 V
4 A
15 A
0.8 A
2 A
360 mW
600 mW
750 mW
1.1 W
2.5 W
9397 750 14511
Product data sheet
Rev. 01 — 27 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2 of 15


Part Number PBSS5440D
Description 40 V PNP low VCEsat (BISS) transistor
Maker NXP
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