PBSS5440D
40 V PNP low VCEsat (BISS) transistor
Rev. 01 — 27 April 2005
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Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a
SOT457 (SC-74) SMD plastic package.
NPN complement: PBSS4440D
1.2 Features
s Ultra low collector-emitter saturation voltage VCEsat
s 4 A continuous collector current capability IC (DC)
s Up to 15 A peak current
s Very low collector-emitter saturation resistance
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
Min
collector-emitter voltage open base
-
collector current (DC)
[1] -
peak collector current
collector-emitter saturation
resistance
t = 1 ms or limited by
Tj(max)
IC = −6 A;
IB = −600 mA
-
[2] -
Typ
-
-
-
55
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Max Unit
−40 V
−4 A
−15 A
75 mΩ
