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NXP Semiconductors Electronic Components Datasheet

PBSS5350Z Datasheet

PNP transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PBSS5350Z
50 V low VCEsat PNP transistor
Product data sheet
Supersedes data of 2003 Jan 20
2003 May 13


NXP Semiconductors Electronic Components Datasheet

PBSS5350Z Datasheet

PNP transistor

No Preview Available !

NXP Semiconductors
50 V low VCEsat PNP transistor
Product data sheet
PBSS5350Z
FEATURES
Low collector-emitter saturation voltage
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
Higher efficiency leading to less heat generation
Reduced PCB area requirements compared to DPAK.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
50 V
3 A
5 A
<150 mΩ
APPLICATIONS
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
– Inductive load driver, e.g. relays, buzzers, motors.
PINNING
PIN
1 base
2 collector
3 emitter
4 collector
DESCRIPTION
handbook, halfpage
4
2, 4
DESCRIPTION
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4350Z.
MARKING
TYPE NUMBER
PBSS5350Z
MARKING CODE
PB5350
1
1
Top view
2
3
MAM288
3
Fig.1 Simplified outline (SOT223) and symbol.
2003 May 13
2


Part Number PBSS5350Z
Description PNP transistor
Maker NXP
PDF Download

PBSS5350Z Datasheet PDF






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