PBSS5330X
PBSS5330X is PNP transistor manufactured by NXP Semiconductors.
FEATURES
- SOT89 (SC-62) package
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements. APPLICATIONS
- Power management
- DC/DC converters
- Supply line switching
- Battery charger
- LCD backlighting.
- Peripheral drivers
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver (e.g. relays, buzzers and motors). QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base PARAMETER
MAX.
- 30
- 3
- 5 107
UNIT V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance
DESCRIPTION
2 3
DESCRIPTION
PNP low VCEsat transistor in a SOT89 plastic package.
3 2 1
1 sym079
MARKING TYPE NUMBER PBSS5330X Note 1.
- = p: Made in Hong Kong.
- = t: Made in Malaysia.
- = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5330X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 MARKING CODE(1)
- 1S Fig.1 Simplified outline (SOT89) and symbol.
2004 Nov 03
Philips Semiconductors
Product specification
30 V, 3 A PNP low VCEsat (BISS) transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation Tamb ≤ 25 °C note 1 note 2 note 3 note 4 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature
- -
- -
- 65
- - 65 CONDITIONS open emitter open base open collector note 4 limited by...
