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NXP Semiconductors Electronic Components Datasheet

PBSS5330X Datasheet

PNP transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS5330X
30 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification
Supersedes data of 2003 Nov 28
2004 Nov 03


NXP Semiconductors Electronic Components Datasheet

PBSS5330X Datasheet

PNP transistor

No Preview Available !

Philips Semiconductors
30 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS5330X
FEATURES
SOT89 (SC-62) package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements.
APPLICATIONS
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral drivers
– Driver in low supply voltage applications
(e.g. lamps and LEDs)
– Inductive load driver (e.g. relays, buzzers
and motors).
DESCRIPTION
PNP low VCEsat transistor in a SOT89 plastic package.
MARKING
TYPE NUMBER
PBSS5330X
MARKING CODE(1)
*1S
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
30 V
3 A
5 A
107 m
PINNING
PIN
1 emitter
2 collector
3 base
DESCRIPTION
321
2
3
1
sym079
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS5330X
NAME
SC-62
PACKAGE
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Nov 03
2


Part Number PBSS5330X
Description PNP transistor
Maker NXP
PDF Download

PBSS5330X Datasheet PDF






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