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PBSS5330X - PNP transistor

Description

DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package.

MARKING TYPE NUMBER PBSS5330X Note 1.

= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

Features

  • SOT89 (SC-62) package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.

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Datasheet Details

Part number PBSS5330X
Manufacturer NXP
File Size 96.57 KB
Description PNP transistor
Datasheet download datasheet PBSS5330X Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 28 2004 Nov 03 Philips Semiconductors Product specification 30 V, 3 A PNP low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors).
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