Datasheet4U Logo Datasheet4U.com

PBSS5330PAS - 3A PNP low VCEsat (BISS) transistor

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

2.

Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS5330PAS PNP transistor nexperia
PBSS5330PA PNP transistor nexperia
PBSS5320T Silicon PNP transistor BLUE ROCKET ELECTRONICS
PBSS5320X PNP transistor nexperia
PBSS5350D PNP transistor nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PBSS5330PA 3A PNP low VCEsat (BISS) transistor
PBSS5330X PNP transistor
PBSS5320D PNP transistor
PBSS5320T PNP transistor
PBSS5320X PNP transistor

Full PDF Text Transcription

Click to expand full text
DF N2 020 D-3 PBSS5330PAS 11 September 2014 30 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4330PAS 2.
Published: |