PBSS5330PA - 3A PNP low VCEsat (BISS) transistor

NXP

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Datasheet Details

Part number	PBSS5330PA
Manufacturer	NXP ↗
File Size	214.30 KB
Description	3A PNP low VCEsat (BISS) transistor
Datasheet	PBSS5330PA_PhilipsSemiconductors.pdf

PBSS5330PA Product details

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.
Exposed heat sink for excellent thermal and electrical conductivity.
Leadless small SMD plastic package with medium power capability 3.

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Published: Jun 29, 2010 |