Datasheet4U Logo Datasheet4U.com

PBSS5330PA - 3A PNP low VCEsat (BISS) transistor

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4330PA.

2.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • Leadless small SMD plastic package with medium power capability 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS5330PA PNP transistor nexperia
PBSS5330PAS PNP transistor nexperia
PBSS5320T Silicon PNP transistor BLUE ROCKET ELECTRONICS
PBSS5320X PNP transistor nexperia
PBSS5350D PNP transistor nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PBSS5330PAS 3A PNP low VCEsat (BISS) transistor
PBSS5330X PNP transistor
PBSS5320D PNP transistor
PBSS5320T PNP transistor
PBSS5320X PNP transistor

Full PDF Text Transcription

Click to expand full text
HUSON3 PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors • Exposed heat sink for excellent thermal and electrical conductivity • Leadless small SMD plastic package with medium power capability 3. Applications • Loadswitch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g.
Published: |