PBSS5260PAP datasheet, transistor equivalent, NXP

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Features and benefits

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* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at h.

Application

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* Load switch Battery-driven devices Power management Charging circuits Power switches (e.g..

Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN. 2. Features and benefit.

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