PBSS5250X
PBSS5250X is PNP Transistor manufactured by NXP Semiconductors.
FEATURES
- SOT89 (SC-62) package
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements. APPLICATIONS
- Power management
- DC/DC converters
- Supply line switching
- Battery charger
- LCD backlighting.
- Peripheral drivers
- Driver in low supply voltage applications (e.g. lamps and LEDs).
- Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION
NPN low VCEsat transistor in a SOT89 plastic package. NPN plement: PBSS4250X. MARKING TYPE NUMBER PBSS5250X Note 1.
- = p : made in Hong Kong
- = t : made in Malaysia
- = W : made in China.
- 1L MARKING CODE(1)
1 Bottom view 2 3 handbook, halfpage
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base DESCRIPTION
PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.
- 50
- 2
- 5 160 UNIT V A A mΩ
2 3 1
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
2003 Jun 17
Philips Semiconductors
Objective specification
50 V, 2 A PNP low VCEsat (BISS) transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage continuous collector current (DC) peak collector current continuous base current (DC) total power dissipation Tamb ≤ 25 °C note 1 note 2 Tj Tamb Tstg Notes junction temperature operating ambient temperature storage temperature
- -
- - 65
- 65 Tj max CONDITIONS open emitter open base open collector
- -
- -
- -...
