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PBSS5160V - PNP low VCEsat (BISS) transistor

Description

PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package.

NPN complement: PBSS4160V.

Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and BCX52 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.2 Features „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and BCX52 1.3 Applications „ Major application segments ‹ Automotive ‹ Telecom infrastructure ‹ Industrial „ Power management ‹ DC-to-DC conversion ‹ Supply line switching „ Peripheral driver ‹ Driver in low supply voltage applications (e.g.
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