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PBSS5160V PNP low VCEsat (BISS) transistor

PBSS5160V Description

PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev.03 * 14 December 2009 Product data sheet 1.Product profile 1.1 General .
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package.

PBSS5160V Features

* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and

PBSS5160V Applications

* Major application segments ‹ Automotive ‹ Telecom infrastructure ‹ Industrial
* Power management ‹ DC-to-DC conversion ‹ Supply line switching
* Peripheral driver ‹ Driver in low supply voltage applications (e. g. lamps and LEDs) ‹ Inductive load driver (e. g. relays, buzzers

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Datasheet Details

Part number
PBSS5160V
Manufacturer
NXP ↗
File Size
171.74 KB
Datasheet
PBSS5160V_NXP.pdf
Description
PNP low VCEsat (BISS) transistor

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