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PBSS5160V Datasheet

PNP low VCEsat (BISS) transistor

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PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
package.
NPN complement: PBSS4160V.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High efficiency leading to less heat generation
„ Reduces printed-circuit board area required
„ Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
„ Major application segments
‹ Automotive
‹ Telecom infrastructure
‹ Industrial
„ Power management
‹ DC-to-DC conversion
‹ Supply line switching
„ Peripheral driver
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
IC = 1 A;
IB = 100 mA
-
[1] -
-
-
- 60
- 1
- 2
220 330
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
A
A
mΩ
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NXP Semiconductors Electronic Components Datasheet

PBSS5160V Datasheet

PNP low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1, 2, 5, 6
3
4
Pinning
Description
collector
base
emitter
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym030
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PBSS5160V -
plastic surface mounted package; 6 leads
Version
SOT666
4. Marking
Table 4. Marking codes
Type number
PBSS5160V
Marking code
51
5. Limiting values
PBSS5160V_3
Product data sheet
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
collector-base voltage open emitter
collector-emitter
voltage
open base
-
-
VEBO
IC
emitter-base voltage open collector
collector current (DC)
-
[1] -
[2] -
ICM peak collector current t = 1 ms or limited
by Tj(max)
IB base current (DC)
IBM
peak base current
tp 300 μs; δ ≤ 0.02
Ptot total power dissipation Tamb 25 °C
-
-
-
[1] -
[2] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
65
65
Rev. 03 — 14 December 2009
Max Unit
80 V
60 V
5 V
0.9 A
1 A
2 A
300
1
300
500
150
+150
+150
mA
A
mW
mW
°C
°C
°C
© NXP B.V. 2009. All rights reserved.
2 of 14
Free Datasheet http://www.datasheet4u.com/


Part Number PBSS5160V
Description PNP low VCEsat (BISS) transistor
Maker NXP
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PBSS5160V Datasheet PDF






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