Datasheet Summary
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03
- 14 December 2009 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN plement: PBSS4160V.
1.2 Features
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- Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
- Major application segments Automotive Tele infrastructure Industrial
- Power management DC-to-DC conversion Supply line...
