PBSS5160QA Datasheet, NXP

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* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hF.

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* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. .

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4160QA. 2. Features and benefits