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PBSS5160QA - PNP low VCEsat (BISS) transistor

PBSS5160QA Description

DF N1 01 PBSS5160QA 23 August 2013 0D -3 60 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 1.General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic pack.

PBSS5160QA Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) ar

PBSS5160QA Applications

* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collec

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Datasheet Details

Part number
PBSS5160QA
Manufacturer
NXP ↗
File Size
281.85 KB
Datasheet
PBSS5160QA_NXP.pdf
Description
PNP low VCEsat (BISS) transistor

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PNP low VCEsat BISS transistor NXP
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