PBSS5140U Datasheet | NXP Semiconductors

URES - Low collector-emitter saturation voltage - High current capability - Improved device reliability due to reduced heat generation - Enhanced performance over SOT23 1A standard packaged transistor. APPLICATIONS - General purpose switching and muting - LCD back lighting - Supply line switching circuits - Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCEsat transistor in a SOT323 (SC-70) plastic package. MARKING 1 2 QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. - 40 - 2 <500 UNIT V A mΩ handbook, halfpage 3 1 2 TYPE NUMBER PBSS5140U MARKING CODE 51t Fig.1 Top view MAM048 Simplified outline (SOT323; SC-70) and symbol. 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 CONDITIONS open emitter open base open collector - - - - - - - - - 65 - - 65...