PBSS5140T
description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4140T.
1.2 Features
I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (h FE) at high IC I High efficiency due to less heat generation
1.3 Applications
I General-purpose switching and muting I LCD backlighting I Supply line switching circuits I Battery-driven equipment (mobile phones, video cameras and handheld devices)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms
IC =
- 500 m A; IB =
- 50 m A
[1] Pulse test:...
