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NXP Semiconductors Electronic Components Datasheet

PBSS5140T Datasheet

PNP transistor

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PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
Rev. 04 — 29 July 2008
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4140T.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
1.3 Applications
I General-purpose switching and muting
I LCD backlighting
I Supply line switching circuits
I Battery-driven equipment (mobile phones, video cameras and handheld devices)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp 1 ms
IC = 500 mA;
IB = 50 mA
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Min Typ Max Unit
- - 40 V
- - 1 A
- - 2 A
[1] - 300 < 500 m


NXP Semiconductors Electronic Components Datasheet

PBSS5140T Datasheet

PNP transistor

No Preview Available !

NXP Semiconductors
PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
12
3
1
2
006aab259
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS5140T
-
plastic surface-mounted package; 3 leads
Version
SOT23
4. Marking
Table 4. Marking codes
Type number
PBSS5140T
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
*2H
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
collector-base voltage open emitter
collector-emitter voltage open base
emitter-base voltage
open collector
collector current
peak collector current
peak base current
single pulse;
tp 1 ms
single pulse;
tp 1 ms
-
-
-
-
-
-
Max Unit
40 V
40 V
5 V
1 A
2 A
1 A
PBSS5140T_4
Product data sheet
Rev. 04 — 29 July 2008
© NXP B.V. 2008. All rights reserved.
2 of 13


Part Number PBSS5140T
Description PNP transistor
Maker NXP
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PBSS5140T Datasheet PDF






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