PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4140T.
Key Features
I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation
1.3.
Full PDF Text Transcription for PBSS5140T (Reference)
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PBSS5140T. For precise diagrams, and layout, please refer to the original PDF.
PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Smal...
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uct profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4140T. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation 1.3 Applications I General-purpose switching and muting I LCD backlighting I Supply line switching circuits I Battery-driven equipment (mobile phones, video cameras and handheld devices) 1.4 Quick reference data Table 1.
PBSS5140T Datasheet
