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NXP Semiconductors Electronic Components Datasheet

PBSS5140D Datasheet

40 V low VCEsat PNP transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D302
PBSS5140D
40 V low VCEsat PNP transistor
Product specification
2001 Nov 15


NXP Semiconductors Electronic Components Datasheet

PBSS5140D Datasheet

40 V low VCEsat PNP transistor

No Preview Available !

Philips Semiconductors
40 V low VCEsat PNP transistor
Product specification
PBSS5140D
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation.
APPLICATIONS
General purpose switching and muting
LCD back-lighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low VCEsat transistor in an SC-74 (SOT457) plastic
package.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
40
1
2
<500
V
A
A
m
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
collector
collector
base
n.c.
collector
emitter
MARKING
TYPE NUMBER
PBSS5140D
MARKING CODE
51
handbook, halfpage 6 5 4
1, 2, 5
3
1
Top view
2
3
MAM458
6
Fig.1 Simplified outline (SC-74; SOT457) and
symbol.
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
− −40 V
− −40 V
− −5 V
− −1 A
− −2 A
− −1 A
460 mW
65
+150
°C
150 °C
65
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2.
2001 Nov 15
2


Part Number PBSS5140D
Description 40 V low VCEsat PNP transistor
Maker NXP
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PBSS5140D Datasheet PDF






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