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PBSS5130PAP Datasheet PNP/PNP low VCEsat (BISS) transistor

Manufacturer: NXP Semiconductors

General Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4130PANP.

NPN/NPN complement: PBSS4130PAN.

Overview

PBSS5130PAP 12 December 2012 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1.

Key Features

  • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 3.