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NXP Semiconductors Electronic Components Datasheet

PBSS5120T Datasheet

20 V/ 1 A PNP low VCEsat (BISS) transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D088
PBSS5120T
20 V, 1 A
PNP low VCEsat (BISS) transistor
Product specification
2003 Sep 29


NXP Semiconductors Electronic Components Datasheet

PBSS5120T Datasheet

20 V/ 1 A PNP low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
20 V, 1 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS5120T
FEATURES
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to less heat generation
Reduced printed-circuit board requirements
Cost effective alternative for MOSFETs in specific
applications.
APPLICATIONS
Power management
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
PNP BISS transistor in a SOT23 plastic package providing
ultra low VCEsat and RCEsat parameters.
NPN complement: PBSS4120T.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
20 V
1 A
2 A
250 m
PINNING
PIN
1 base
2 emitter
3 collector
DESCRIPTION
handbook, halfpage
3
1
Top view
1
2
MAM256
3
2
MARKING
TYPE NUMBER
PBSS5120T
MARKING CODE(1)
*3K
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS5120T
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2003 Sep 29
2


Part Number PBSS5120T
Description 20 V/ 1 A PNP low VCEsat (BISS) transistor
Maker NXP
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