• Part: PBSS5120T
  • Description: 20 V/ 1 A PNP low VCEsat (BISS) transistor
  • Category: Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 47.72 KB
PBSS5120T Datasheet (PDF) Download
NXP Semiconductors
PBSS5120T

Description

MARKING CODE(1) *3K 3 3 1 2 1 2 MAM256 Top view Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 plastic surface mounted package; 3 leads 2003 Sep 29 2 Philips Semiconductors Product specification 20 V, 1 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).

Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • Cost effective alternative for MOSFETs in specific applications. APPLICATIONS
  • Power management – DC/DC conversion – Supply line switching – Battery charger – LCD backlighting
  • * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China