PBSS5120T Datasheet | NXP Semiconductors

FEATURES - Low collector-emitter saturation voltage VCEsat - High collector current capability IC and ICM - High efficiency leading to less heat generation - Reduced printed-circuit board requirements - Cost effective alternative for MOSFETs in specific applications. APPLICATIONS - Power management - DC/DC conversion - Supply line switching - Battery charger - LCD backlighting. - Peripheral drivers - Driver in low supply voltage applications (e.g. lamps and LEDs) handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. - 20 - 1 - 2 250 UNIT V A A mΩ - Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION PNP BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. NPN plement: PBSS4120T. MARKING TYPE NUMBER PBSS5120T Note 1. - = p: made in Hong Kong. - = t: made in Malaysia. - = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5120T - DESCRIPTION MARKING CODE(1) - 3K 3 3 1 2 1 2 MAM256 Top view Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 plastic surface mounted package; 3 leads 2003 Sep 29 Philips Semiconductors Product specification 20 V, 1 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 CONDITIONS open emitter open base open collector - - - - - -...