Datasheet4U Logo Datasheet4U.com

PBSS5112PAP - PNP/PNP low VCEsat (BISS) transistor

Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4112PANP.

NPN/NPN complement: PBSS4112PAN.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified 1.3.

📥 Download Datasheet

Datasheet preview – PBSS5112PAP

Datasheet Details

Part number PBSS5112PAP
Manufacturer NXP Semiconductors
File Size 271.44 KB
Description PNP/PNP low VCEsat (BISS) transistor
Datasheet download datasheet PBSS5112PAP Datasheet
Additional preview pages of the PBSS5112PAP datasheet.

📁 Similar Datasheet

  • PBSS5112PAP - 1A PNP/PNP low VCEsat (BISS) transistor (nexperia)
  • PBSS5130PAP - 1A PNP/PNP low VCEsat (BISS) transistor (nexperia)
  • PBSS5130T - PNP Transistor (NXP Semiconductors)
  • PBSS5130T - 1A PNP low VCEsat transistor (nexperia)
  • PBSS5140S - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • PBSS5140T - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • PBSS5160DS - 60V 1A PNP/PNP low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBSS5160K - 60V 1A PNP low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBSS5160K - 60V 1A PNP low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBSS5160PAP - 1A PNP/PNP low VCEsat (BISS) transistor (nexperia)
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
PBSS5112PAP 30 November 2012 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN. 1.2 Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified 1.3 Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g.
Published: |