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PBSS5112PAP Datasheet

PNP/PNP low VCEsat (BISS) transistor

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PBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
30 November 2012
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High energy efficiency due to less heat generation
AEC-Q101 qualified
1.3 Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
VEBO
emitter-base voltage
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
open collector
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -120 V
- - -1 A
- - -1.5 A
- - -7 V
- - 440 mΩ
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NXP Semiconductors Electronic Components Datasheet

PBSS5112PAP Datasheet

PNP/PNP low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
7 C1 collector TR1
8 C2 collector TR2
Simplified outline
654
Graphic symbol
C1 B2 E2
78
TR2
TR1
123
Transparent top view
DFN2020-6 (SOT1118)
E1 B1 C2
sym138
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5112PAP
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
Version
SOT1118
4. Marking
Table 4. Marking codes
Type number
PBSS5112PAP
Marking code
2S
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB base current
PBSS5112PAP
All information provided in this document is subject to legal disclaimers.
Product data sheet
30 November 2012
Min Max Unit
- -120 V
- -120 V
- -7 V
- -1 A
- -1.5 A
- -0.3 A
© NXP B.V. 2012. All rights reserved
2 / 17
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Part Number PBSS5112PAP
Description PNP/PNP low VCEsat (BISS) transistor
Maker NXP
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