Datasheet Details
| Part number | PBSS4612PA |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 200.61 KB |
| Description | 6 A NPN low VCEsat (BISS) transistor |
| Datasheet |
 PBSS4612PA Datasheet
|
|
|
General Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
PNP complement: PBSS5612PA.
Key Features
- Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3.