PBSS4580PA transistor equivalent, 5.6 a npn low vcesat (biss) transistor.
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* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) ar.
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* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5580PA.
1.2 Features and benefits
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