PBSS4580PA Datasheet PDF

FEATURES AND BENEFITS

„ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3

APPLICATIONS

„ „ „ „ „ Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 5.6 A; IB = 280 mA [1] Conditions open base Min - Typ 40 Max 80 5.6 7 57 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. w w w . D a t a S h e e t 4 U . c NXP Semiconductors PBSS4580PA 80 V, 5.6 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning

DESCRIPTION

base emitter collector 3 1 2 1 2 sym021 Simplified outline Graphic symbol 3 Transparent top view 3.