Datasheet4U Logo Datasheet4U.com

PBSS4580PA - 5.6 A NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

PNP complement: PBSS5580PA.

Key Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS4520X 20V 5A NPN low VCEsat (BISS) transistor NXP Semiconductors
PBSS4540X 40V 5A NPN low VCEsat (BISS) transistor NXP Semiconductors
PBSS4540Z 40V NPN transistor nexperia
PBSS4021NT NPN transistor nexperia
PBSS4021NX 20V 7A NPN transistor nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PBSS4540Z NPN medium power transistor
PBSS4560PA 6A NPN Transistor
PBSS4021NX 7 A PNP low VCEsat (BISS) transistor
PBSS4021NZ 8 A NPN low VCEsat (BISS) transistor
PBSS4021PX 6.2 A PNP low VCEsat (BISS) transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PBSS4580PA 80 V, 5.6 A NPN low VCEsat (BISS) transistor Rev. 01 — 15 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5580PA. 1.2 Features and benefits „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.