Datasheet Summary
60 V, 6 A NPN low VCEsat (BISS) transistor
Rev. 1
- 19 May 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
PNP plement: PBSS5560PA.
1.2 Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- Exposed heat sink for excellent thermal and electrical conductivity
- Leadless small SMD plastic package with medium power...