* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* Smaller required Printed-Circuit Board (PCB) area than for .

* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e.g. .

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5560PA. 1.2 Features and benefits
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