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NXP Semiconductors Electronic Components Datasheet

PBSS4440D Datasheet

NPN transistor

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PBSS4440D
40 V NPN low VCEsat (BISS) transistor
Rev. 02 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
SMD plastic package.
PNP complement: PBSS5440D.
1.2 Features
„ Ultra low collector-emitter saturation voltage VCEsat
„ 4 A continuous collector current capability IC (DC)
„ Up to 15 A peak current
„ Very low collector-emitter saturation resistance
„ High efficiency due to less heat generation
1.3 Applications
„ Power management functions
„ Charging circuits
„ DC-to-DC conversion
„ MOSFET gate driving
„ Power switches (e.g. motors, fans)
„ Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
Min
collector-emitter voltage open base
-
collector current (DC)
[1] -
peak collector current
collector-emitter saturation
resistance
t = 1 ms or limited by
Tj(max)
IC = 6 A; IB = 600 mA
-
[2] -
Typ
-
-
-
55
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint.
[2] Pulse test: tp 300 μs; δ ≤ 0.02.
Max Unit
40 V
4A
15 A
75 mΩ


NXP Semiconductors Electronic Components Datasheet

PBSS4440D Datasheet

NPN transistor

No Preview Available !

NXP Semiconductors
PBSS4440D
40 V NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
collector
collector
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym014
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PBSS4440D
SC-74
plastic surface mounted package; 6 leads
Version
SOT457
4. Marking
Table 4. Marking codes
Type number
PBSS4440D
Marking code
61
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
open emitter
open base
open collector
t = 1 ms or limited
by Tj(max)
tp 300 μs
Tamb 25 °C
-
-
-
[1] -
-
-
-
[2] -
[3] -
[4] -
[1] -
[2][5] -
Max Unit
60 V
40 V
5V
4A
15 A
0.8 A
2A
360 mW
600 mW
750 mW
1.1 W
2.5 W
PBSS4440D_2
Product data sheet
Rev. 02 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
2 of 13


Part Number PBSS4440D
Description NPN transistor
Maker NXP
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