PBSS4440D Datasheet (PDF) Download
NXP Semiconductors
PBSS4440D

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS5440D.

Key Features

  • Ultra low collector-emitter saturation voltage VCEsat
  • 4 A continuous collector current capability IC (DC)
  • Up to 15 A peak current
  • Very low collector-emitter saturation resistance
  • High efficiency due to less heat generation