900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PBSS4420D Datasheet

NPN low VCEsat (BISS) transistor

No Preview Available !

www.DataSheet4U.com
PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
Rev. 01 — 21 April 2005
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
PNP complement: PBSS5420D.
1.2 Features
s Very low collector-emitter saturation resistance
s Ultra low collector-emitter saturation voltage
s 4 A continuous collector current
s Up to 15 A peak current
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
tp 1 ms
IC = 4 A;
IB = 400 mA
Min Typ Max
- - 20
[1] - - 4
- - 15
[2] -
50 70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Unit
V
A
A
m


NXP Semiconductors Electronic Components Datasheet

PBSS4420D Datasheet

NPN low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
PBSS4420D
20 V, 4 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
collector
collector
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym014
3. Ordering information
Table 3: Ordering information
Type number Package
Name
Description
PBSS4420D
SC-74
plastic surface mounted package; 6 leads
Version
SOT457
4. Marking
Table 4: Marking codes
Type number
PBSS4420D
Marking code
D4
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
[1] -
-
-
-
[2] -
[3] -
[4] -
[1] -
[2] [5] -
Max Unit
20 V
20 V
5V
4A
15 A
0.8 A
2A
360 mW
600 mW
750 mW
1.1 W
2.5 W
9397 750 14028
Product data sheet
Rev. 01 — 21 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2 of 16


Part Number PBSS4420D
Description NPN low VCEsat (BISS) transistor
Maker NXP
PDF Download

PBSS4420D Datasheet PDF






Similar Datasheet

1 PBSS4420D NPN low VCEsat (BISS) transistor
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy