Datasheet4U Logo Datasheet4U.com

PBSS4360Z - 3A NPN low VCEsat (BISS) transistor

Datasheet Summary

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS5360Z.

2.

Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3.

📥 Download Datasheet

Datasheet preview – PBSS4360Z

Datasheet Details

Part number PBSS4360Z
Manufacturer NXP
File Size 254.59 KB
Description 3A NPN low VCEsat (BISS) transistor
Datasheet download datasheet PBSS4360Z Datasheet
Additional preview pages of the PBSS4360Z datasheet.

📁 Similar Datasheet

Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
PBSS4360Z 26 February 2014 SO T2 23 60 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360Z. 2. Features and benefits • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • • DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1.
Published: |