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PBSS4360Z Datasheet

3A NPN low VCEsat (BISS) transistor

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PBSS4360Z
60 V, 3 A NPN low VCEsat (BISS) transistor
26 February 2014
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360Z.
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; single pulse
collector-emitter
saturation resistance
IC = 2 A; IB = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 3A
- - 6A
- - 140 mΩ
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NXP Semiconductors Electronic Components Datasheet

PBSS4360Z Datasheet

3A NPN low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBSS4360Z
60 V, 3 A NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 C collector
3 E emitter
4 C collector
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
2, 4
1
3
sym016
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS4360Z
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
7. Marking
Table 4. Marking codes
Type number
PBSS4360Z
Marking code
P4360Z
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
tp ≤ 1 ms; single pulse
IB base current
IBM peak base current
tp ≤ 1 ms; single pulse
Ptot total power dissipation
PBSS4360Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 February 2014
Min Max Unit
- 80 V
- 60 V
- 7V
- 3A
- 6A
- 500 mA
- 1A
[1] -
0.65 W
[2] -
1W
[3] -
1.35 W
© NXP N.V. 2014. All rights reserved
2 / 14


Part Number PBSS4360Z
Description 3A NPN low VCEsat (BISS) transistor
Maker NXP
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PBSS4360Z Datasheet PDF






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