PBSS4360Z transistor equivalent, 3a npn low vcesat (biss) transistor.
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Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AE.
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DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360Z.
2. Features and benefits
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Low collector-emitter saturation.
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