PBSS4350Z Key Features
- Low collector-emitter saturation voltage
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- Higher efficiency leading to less heat generation
- Reduced PCB area requirements pared to DPAK
- Part: PBSS4350Z
- Manufacturer: NXP Semiconductors (official site)
- Size: 92.17 KB
Other PBSS4350Z Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PBSS4350Z | 50V low VCEsat NPN transistor |
|
Nexperia |
PBSS4350SPN | NPN/PNP transistor |
|
Nexperia |
PBSS4350SS | NPN/NPN transistor |
Kexin Semiconductor |
PBSS4350T | NPN Transistors |
|
Nexperia |
PBSS4350X-Q | 50V 3A NPN low VCEsat transistor |
PBSS4350Z Description
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet Supersedes data of 2003 Jan 20 2003 May 13 NXP Semiconductors 50 V low VCEsat NPN transistor Product data sheet PBSS4350Z.