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NXP Semiconductors Electronic Components Datasheet

PBSS4350T Datasheet

NPN transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4350T
50 V; 3 A NPN low VCEsat
(BISS) transistor
Product data sheet
Supersedes data of 2002 Aug 08
2004 Jan 09


NXP Semiconductors Electronic Components Datasheet

PBSS4350T Datasheet

NPN transistor

No Preview Available !

NXP Semiconductors
50 V; 3 A NPN low VCEsat
(BISS) transistor
Product data sheet
PBSS4350T
FEATURES
Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation.
APPLICATIONS
Power management applications
Low and medium power DC/DC convertors
Supply line switching
Battery chargers
Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5350T.
MARKING
TYPE NUMBER
PBSS4350T
MARKING CODE(1)
ZC*
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICRP
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
RCEsat
equivalent on-resistance
MAX. UNIT
50 V
2A
3A
130 mΩ
PINNING
PIN
1 base
2 emitter
3 collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
MAM255
2
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PBSS4350T
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 09
2


Part Number PBSS4350T
Description NPN transistor
Maker NXP
PDF Download

PBSS4350T Datasheet PDF






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