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PBSS4350T - NPN transistor

General Description

NPN low VCEsat transistor in a SOT23 plastic package.

PNP complement: PBSS5350T.

1.

= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

Key Features

  • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat.
  • High collector current capability.
  • High collector current gain.
  • Improved efficiency due to reduced heat generation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan 09 NXP Semiconductors 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet PBSS4350T FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5350T. MARKING TYPE NUMBER PBSS4350T MARKING CODE(1) ZC* Note 1.