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PBSS4350T - NPN transistor

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NXP

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PBSS4350T NPN transistor by NXP - Datasheet Preview — Datasheet preview – PBSS4350T

Datasheet Details

Part number	PBSS4350T
Manufacturer	NXP
File Size	93.94 KB
Description	NPN transistor
Datasheet	PBSS4350T Datasheet
Additional preview pages of the PBSS4350T datasheet.

Product details

Description

NPN low VCEsat transistor in a SOT23 plastic package. Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China.

Features

Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat.
High collector current capability.
High collector current gain.
Improved efficiency due to reduced heat generation.

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Published: Nov 22, 2006 |