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NXP Semiconductors Electronic Components Datasheet

PBSS4350SS Datasheet

transistor

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PBSS4350SS
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
Rev. 01 — 3 April 2007
Product data sheet
1. Product profile
1.1 General description
NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package
NXP
PBSS4350SS SOT96-1
Name
SO8
NPN/PNP
complement
PBSS4350SPN
PNP/PNP
complement
PBSS5350SS
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans)
I Automotive
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 2 A;
IB = 200 mA
Min Typ Max
Unit
- - 50 V
- - 2.7 A
--5
A
[1] -
90 130 m


NXP Semiconductors Electronic Components Datasheet

PBSS4350SS Datasheet

transistor

No Preview Available !

NXP Semiconductors
PBSS4350SS
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
7
8
Pinning
Description
emitter TR1
base TR1
emitter TR2
base TR2
collector TR2
collector TR2
collector TR1
collector TR1
Simplified outline Symbol
8 5 8765
TR1 TR2
1 4 1234
006aaa966
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
PBSS4350SS SO8
plastic small outline package; 8 leads; body width
3.9 mm
Version
SOT96-1
4. Marking
Table 5. Marking codes
Type number
PBSS4350SS
Marking code
4350SS
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1] -
[2] -
[3] -
Max Unit
50 V
50 V
5V
2.7 A
5A
0.5 A
0.55 W
0.87 W
1.43 W
PBSS4350SS_1
Product data sheet
Rev. 01 — 3 April 2007
© NXP B.V. 2007. All rights reserved.
2 of 14


Part Number PBSS4350SS
Description transistor
Maker NXP
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PBSS4350SS Datasheet PDF






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