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PBSS4350SPN - 2.7A NPN/PNP Low VCEsat (BISS) Transistor

Description

NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Features

  • I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 5 April 2007 www.datasheet4u.com Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4350SPN SOT96-1 Name SO8 NPN/NPN complement PBSS4350SS PNP/PNP complement PBSS5350SS Type number 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
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