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NXP Semiconductors Electronic Components Datasheet

PBSS4330X Datasheet

transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PBSS4330X
30 V, 3 A
NPN low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2003 Nov 28
2004 Dec 06


NXP Semiconductors Electronic Components Datasheet

PBSS4330X Datasheet

transistor

No Preview Available !

NXP Semiconductors
30 V, 3 A
NPN low VCEsat (BISS) transistor
Product data sheet
PBSS4330X
FEATURES
SOT89 (SC-62) package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
30 V
3A
5A
100 mΩ
APPLICATIONS
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral drivers
– Driver in low supply voltage applications
(e.g. lamps and LEDs)
– Inductive load driver (e.g. relays, buzzers
and motors).
DESCRIPTION
NPN low VCEsat transistor in a SOT89 plastic package.
PINNING
PIN
1 emitter
2 collector
3 base
DESCRIPTION
321
2
3
1
sym042
MARKING
TYPE NUMBER
PBSS4330X
MARKING CODE(1)
*1R
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS4330X
NAME
SC-62
PACKAGE
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Dec 06
2


Part Number PBSS4330X
Description transistor
Maker NXP
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PBSS4330X Datasheet PDF






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