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PBSS4330PAS Datasheet

3A NPN low VCEsat (BISS) transistor

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PBSS4330PAS
30 V, 3 A NPN low VCEsat (BISS) transistor
11 September 2014
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
package with medium power capability and visible and soldarable side pads.
PNP complement: PBSS5330PAS
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
High temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) area requirements
Leadless small SMD plastic package with soldarable side pads
Exposed heat sink for excellent thermal and electrical conductivity
Suitable for Automatic Optical Inspection (AOI) of solder joint
AEC-Q101 qualified
3. Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 30 V
- - 3A
- - 5A
- 75 100 mΩ
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NXP Semiconductors Electronic Components Datasheet

PBSS4330PAS Datasheet

3A NPN low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBSS4330PAS
30 V, 3 A NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 E emitter
3 C collector
Simplified outline
3
Graphic symbol
3
1
12
Transparent top view
DFN2020D-3 (SOT1061D)
2
sym021
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS4330PAS
DFN2020D-3
Description
DFN2020D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 x 2 x 0.65 mm
Version
SOT1061D
7. Marking
Table 4. Marking codes
Type number
PBSS4330PAS
Marking code
E1
PBSS4330PAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 18


Part Number PBSS4330PAS
Description 3A NPN low VCEsat (BISS) transistor
Maker NXP
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