PBSS4330PAS transistor equivalent, 3a npn low vcesat (biss) transistor.
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Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector cu.
up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable si.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP comp.
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