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PBSS4330PA Datasheet, NXP

PBSS4330PA transistor equivalent, 3 a npn low vcesat (biss) transistor.

PBSS4330PA Avg. rating / M : 1.0 rating-11

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PBSS4330PA Datasheet

Features and benefits


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* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) ar.

Application


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* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. .

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5330PA. 1.2 Features and benefits
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TAGS

PBSS4330PA
NPN
low
VCEsat
BISS
transistor
NXP

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