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PBSS4330PA Datasheet

3 A NPN low VCEsat (BISS) transistor

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PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 01 — 19 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5330PA.
1.2 Features and benefits
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
„ Exposed heat sink for excellent thermal and electrical conductivity
„ Leadless small SMD plastic package with medium power capability
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 3 A;
IB = 300 mA
Min Typ Max Unit
- - 30 V
- - 3A
- - 5A
[1] -
75 100 mΩ


NXP Semiconductors Electronic Components Datasheet

PBSS4330PA Datasheet

3 A NPN low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
www.DataSheet4U.c
PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
12
Transparent top view
3
1
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
Version
PBSS4330PA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2 × 2 × 0.65 mm
4. Marking
Table 4. Marking codes
Type number
PBSS4330PA
Marking code
AH
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1] -
[2] -
[3] -
[4] -
Max Unit
50 V
30 V
6V
3A
5A
500 mA
500 mW
1W
1.25 W
2.1 W
PBSS4330PA_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
2 of 15


Part Number PBSS4330PA
Description 3 A NPN low VCEsat (BISS) transistor
Maker NXP
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