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PBSS4320X - 20 V / 3 A NPN low VCEsat (BISS) transistor

Description

NPN low VCEsat transistor in a SOT89 plastic package.

PNP complement: PBSS5320X.

Features

  • SOT89 (SC-62) package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Dec 15 2004 Nov 03 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors).
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