PBSS4260QA
PBSS4260QA is NPN low VCEsat (BISS) transistor manufactured by NXP Semiconductors.
DF N1 01
28 August 2013
0D -3
60 V, 2 A NPN low VCEsat (BISS) transistor
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP plement: PBSS5260QA.
2. Features and benefits
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- Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain h FE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified
3. Applications
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- Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Conditions open base Min Typ 130 Max 60 2 3 180 Unit V A A mΩ
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NXP Semiconductors
60 V, 2 A NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pin 1 2 3 4 Pinning information Symbol Description B E C C base emitter collector collector
2 Transparent top view
Simplified outline
Graphic symbol
E sym123
DFN1010D-3 (SOT1215)
6. Ordering...
