PBSS4260PANP Datasheet | NXP Semiconductors

12 December 2012 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN plement: PBSS4260PAN. PNP/PNP plement: PBSS5260PAP. 2. Features and benefits - - - - - - Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain h FE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3. Applications - - - - - Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 165 mΩ Quick reference data Parameter collector-emitter voltage collector current peak collector current single pulse; tp ≤ 1 ms Conditions open base Min Typ Max 60 2 3 Unit V A A Per transistor; for the PNP transistor with negative polarity Scan or click this QR code to view the latest information for this product Free Datasheet http://../ NXP Semiconductors 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Symbol TR2 (PNP) RCEsat Parameter collector-emitter saturation resistance Conditions IC = -1 A; IB = -100 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Min - Typ - Max 250 Unit mΩ 5. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description E1 B1 C2 E2 B2 C1 C1 C2 emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 collector TR1 collector...