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PBSS4260PANP Datasheet

NPN/NPN low VCEsat (BISS) transistor

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PBSS4260PANP
60 V, 2 A NPN/PNP low VCEsat (BISS) transistor
12 December 2012
Product data sheet
1. General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
IC collector current
ICM peak collector current single pulse; tp ≤ 1 ms
TR1 (NPN)
RCEsat
collector-emitter
saturation resistance
IC = 1 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 2A
- - 3A
- - 165 mΩ
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NXP Semiconductors Electronic Components Datasheet

PBSS4260PANP Datasheet

NPN/NPN low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
PBSS4260PANP
60 V, 2 A NPN/PNP low VCEsat (BISS) transistor
Symbol
TR2 (PNP)
RCEsat
Parameter
Conditions
collector-emitter
saturation resistance
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 250 mΩ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
7 C1 collector TR1
8 C2 collector TR2
Simplified outline
654
Graphic symbol
C1 B2 E2
78
TR2
TR1
123
Transparent top view
DFN2020-6 (SOT1118)
E1 B1 C2
sym139
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS4260PANP
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
Version
SOT1118
7. Marking
Table 4. Marking codes
Type number
PBSS4260PANP
Marking code
2Q
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
VCEO
PBSS4260PANP
collector-emitter voltage
open base
All information provided in this document is subject to legal disclaimers.
Product data sheet
12 December 2012
Min Max Unit
- 60 V
- 60 V
© NXP B.V. 2012. All rights reserved
2 / 21
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Part Number PBSS4260PANP
Description NPN/NPN low VCEsat (BISS) transistor
Maker NXP
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