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PBSS4260PAN Datasheet, NXP

PBSS4260PAN transistor equivalent, npn/npn low vcesat (biss) transistor.

PBSS4260PAN Avg. rating / M : 1.0 rating-12

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PBSS4260PAN Datasheet

Features and benefits


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* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at h.

Application


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* Load switch Battery-driven devices Power management Charging circuits Power switches (e.g..

Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP. 2. Features and benefit.

Image gallery

PBSS4260PAN Page 1 PBSS4260PAN Page 2 PBSS4260PAN Page 3

TAGS

PBSS4260PAN
NPN
NPN
low
VCEsat
BISS
transistor
NXP

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