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PBSS4260PAN - NPN/NPN low VCEsat (BISS) transistor

Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4260PANP.

PNP/PNP complement: PBSS5260PAP.

Features

  • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3.

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Full PDF Text Transcription

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PBSS4260PAN 12 December 2012 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP. 2. Features and benefits • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4.
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