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PBSS4240DPN Datasheet 40V low VCEsat NPN/PNP transistor

Manufacturer: NXP Semiconductors

General Description

NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package.

MARKING TYPE NUMBER PBSS4240DPN MARKING CODE M3 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector VCEO IC ICRP ICM RCEsat emitter-collector voltage QUICK REFERENCE DATA PBSS4240DPN MAX.

SYMBOL PARAMETER NPN PNP 40 1.35 2 3 200 −40 −1.1 −2 −3 260 V A A A mΩ UNIT collector current (DC) repetitive peak collector current peak collector current equivalent on-resistance DESCRIPTION TR1;

Overview

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product specification 2003 Feb 20 Philips Semiconductors Product specification 40 V low VCEsat.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • High efficiency leading to reduced heat generation.
  • Reduced printed-circuit board area requirements.