PBSS4130T transistor equivalent, npn low vcesat (biss) transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency leading to less heat generation
* Reduc.
APPLICATIONS
* Power management
– DC/DC conversion
– Supply line switching
&nbs.
NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5130T. MARKING TYPE NUMBER PBSS4130T Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORM.
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