PBSS3540MB transistor equivalent, 0.5a pnp low vcesat (biss) transistor.
* Leadless ultra small SMD plastic package
* Low package height of 0.37 mm
* Low collector-emitter saturation
voltage VCEsat
* High collector current capa.
* DC-to-DC conversion
* Supply line switching
* Battery charger
* High efficiency due to less heat gene.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS2540MB.
1.2 Features and benefits
* Leadless ultra small SMD plastic package
* .
Image gallery
TAGS
Download (Size : 194.37KB)