PBHV9115X Datasheet | NXP Semiconductors

description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits - - - - High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (h FE) at high IC 1.3 Applications - - - - - LED driver for LED chain module LCD backlighting Automotive motor management Hook switch for wired tele Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Symbol VCEO IC h FE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = - 10 V; IC = - 50 m A Conditions open base Min 100 Typ 220 Max - 150 - 1 Unit V A 2. Pinning information Table 2. Pin 1 2 3 Pinning Description emitter collector base 3 2 1 3 1 sym079 Simplified outline Graphic symbol .. NXP Semiconductors 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor 3. Ordering information Table 3. Ordering information Package Name PBHV9115X SC-62 Description plastic surface-mounted package; collector pad for good heat transfer; 3 leads Version SOT89 Type number 4. Marking Table 4. Marking codes Marking code[1] - 4G Type number PBHV9115X [1] - = -: made in Hong Kong - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VCESM VEBO IC ICM IBM Ptot Tj Tamb Tstg [1] [2] Parameter collector-base voltage collector-emitter voltage collector-emitter peak voltage emitter-base voltage collector current peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature Conditions open emitter open base VBE = 0 V open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25...