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PBHV9115X Datasheet

1 A PNP high-voltage low VCEsat (BISS) transistor

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PBHV9115X
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 10 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ High voltage
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
1.3 Applications
„ LED driver for LED chain module
„ LCD backlighting
„ Automotive motor management
„ Hook switch for wired telecom
„ Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = 10 V;
IC = 50 mA
Min Typ Max Unit
- - 150 V
- - 1 A
100 220 -
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
emitter
collector
base
Simplified outline Graphic symbol
321
2
3
1
sym079


NXP Semiconductors Electronic Components Datasheet

PBHV9115X Datasheet

1 A PNP high-voltage low VCEsat (BISS) transistor

No Preview Available !

NXP Semiconductors
www.DataSheet4U.com
PBHV9115X
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PBHV9115X SC-62
plastic surface-mounted package; collector pad for good
heat transfer; 3 leads
Version
SOT89
4. Marking
Table 4. Marking codes
Type number
PBHV9115X
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
*4G
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VCESM
collector-base voltage
collector-emitter voltage
collector-emitter peak
voltage
open emitter
open base
VBE = 0 V
-
-
-
VEBO
IC
ICM
IBM
Ptot
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
open collector
single pulse;
tp 1 ms
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
[1]
[2]
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
55
65
Max
200
150
200
Unit
V
V
V
6 V
1 A
2 A
400 mA
520
1.5
150
+150
+150
mW
W
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
2 of 13


Part Number PBHV9115X
Description 1 A PNP high-voltage low VCEsat (BISS) transistor
Maker NXP
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PBHV9115X Datasheet PDF






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