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PBHV9115X
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 10 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
1.3 Applications
LED driver for LED chain module
LCD backlighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = −10 V;
IC = −50 mA
Min Typ Max Unit
- - −150 V
- - −1 A
100 220 -
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
emitter
collector
base
Simplified outline Graphic symbol
321
2
3
1
sym079
