logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

OM3115N NXP

OM3115N Hybrid integrated circuits for inductive proximity detectors

OM3115N Avg. rating / M : star-14

datasheet Download

OM3115N Datasheet

Features and benefits


• Extra small dimensions (3 x 20 mm max.)
• Wide supply voltage range (6 to 35 V)
• Supply current typical 1.5 mA (output stage switched off)
• High outpu.

Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these produ.

Image gallery

OM3115N OM3115N OM3115N

TAGS
OM3115N
Hybrid
integrated
circuits
for
inductive
proximity
detectors
OM3115P
OM3105N
OM3105P
NXP
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy