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MRFE6VS25NR1 - RF Power LDMOS Transistors

Key Features

  • Wide operating frequency range.
  • Extreme ruggedness.
  • Unmatched, capable of very broadband operation.
  • Integrated stability enhancements.
  • Low thermal resistance.
  • Extended ESD protection circuit  2012, 2019 NXP B. V. RF Device Data NXP Semiconductors Document Number: MRFE6VS25N Rev. 2, 03/2019 MRFE6VS25NR1 MRFE6VS25GNR1 1.8--2000 MHz, 25 W, 50 V.

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Full PDF Text Transcription (Reference)

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NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Volts Frequency (MHz) Signal Type Pout (W) 1.8 to 30 (2,6) Two--Tone (10 kHz spacing) 25 PEP 30--512 (3,6) Two--Tone (200 kHz spacing) 25 PEP 512 (4) Pulse (100 sec, 20% Duty Cycle) 25 Peak 512 (4) CW 25 1030 (5) CW 25 Gps (dB) 25 17.1 25.4 25.5 22.5 D (%) 51 30.1 74.5 74.