Datasheet4U Logo Datasheet4U.com

MRFE6VP61K25HSR5 - RF Power LDMOS Transistors

Download the MRFE6VP61K25HSR5 datasheet PDF. This datasheet also covers the MRFE6VP61K25HR6 variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Device can be used Single--Ended or in a Push--Pull Configuration.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Characterized from 30 V to 50 V for Extended Power Range.
  • Suitable for Linear.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRFE6VP61K25HR6_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRFE6VP61K25HR6 RF Power LDMOS Transistors Freescale Semiconductor
MRFE6VP6300HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRFE6VP6300HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRFE6VP100HR5 RF Power LDMOS Transistors Freescale Semiconductor
MRFE6VP100HSR5 RF Power LDMOS Transistors Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRFE6VP61K25HR5 RF Power LDMOS Transistors
MRFE6VP61K25GN RF Power LDMOS Transistors
MRFE6VP61K25GSR5 RF Power LDMOS Transistors
MRFE6VP61K25N RF Power LDMOS Transistors
MRFE6VS25GNR1 RF Power LDMOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.  Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) CW 1250 Peak 1250 CW 230 230 24.0 74.0 22.9 74.6 Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 1.
Published: |