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MRF6VP3450HSR6 - RF Power FET

Download the MRF6VP3450HSR6 datasheet PDF. This datasheet also covers the MRF6VP3450HR6 variant, as both devices belong to the same rf power fet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Input Matched for Ease of Use.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Designed for Push--Pull Operation.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant.
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6VP3450HR6-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MRF6VP41KHSR6 RF Power FET Freescale Semiconductor
MRF6V10250HSR3 RF Power Field Effect Transistor Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRF6VP3450HSR5 RF Power FET
MRF6VP3450HR5 RF Power FET
MRF6VP3450HR6 RF Power FET
MRF6VP11KGSR5 RF Power FET
MRF6VP11KHR6 RF Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM Power Gain — 22.
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